SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 492, Issue 3, 2001, Pages 345-353

Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

(6) Joyce, P B a Krzyzewski, T J a Steans, P H a Bell, G R a Neave, J H a Jones, T S a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

Gallium arsenide; Indium arsenide; Quantum effects; Single crystal epitaxy

Indexed keywords

ANISOTROPY; CRYSTALLOGRAPHY; ELECTRONIC PROPERTIES; ENCAPSULATION; MASS TRANSFER; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS;

MASS TRANSPORT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035922853 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01479-0 Document Type: Article

Times cited : (81)

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