Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)

Applied Physics Letters

Volumn 76, Issue 12, 2000, Pages 1558-1560

  Leon, R ^a   Wellman, J ^a   Liao, X Z ^b   Zou, J ^b   Cockayne, D J H ^c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF SYDNEY   (Australia)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001664032     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126095     Document Type: Article

References (9)

1. R. Leon, S. Marcinkevicius, X. Z. Liao, J. Zou, D. J. H. Cockayne, and S. Fafard, Phys. Rev. B 60, R8517 (1999).
2. R. Leon and S. Fafard, Phys. Rev. B 58, R1726 (1998).
3. The deposition scale and gradients have been calibrated by measurements of the photoluminescence emission and the corresponding shifts as a function of distance from graded InGaAs/GaAs capped quantum wells, which allowed establishing a growth rate in MLs as a function of distance from the edge of the MOCVD susceptor.
4. M. D. Johnson, K. T. Leung, A. Birch, B. G. Orr, and J. Tersoff, Surf. Sci. 350, 254 (1996).
5. J. Tersoff, M. D. Johnson, and B. G. Orr, Phys. Rev. Lett. 78, 282 (1997).
6. Possible changes in aspect ratio make this analysis complicated. Our observation of higher aspect ratios is buried islands by TEM (see Ref. 7) and the observation of lower aspect ratio islands could be partly explained by this effect, since adatoms would preferentially adhere to the island edges.
7. X. Z. Liao, J. Zou, X. F. Duan, D. J. H. Cockayne, R. Leon, and C. Lobo, Phys. Rev. B 58, R4235 (1998).
8. X. Z. Liao, J. Zou, D. J. H. Cockayne, R. Leon, and C. Lobo, Phys. Rev. Lett. 82, 5148 (1999).
9. J. Tersoff, Phys. Rev. Lett. 81, 3183 (1998).