Ripening of self-organized InAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 606-610

  Potschke K ^a   Muller Kirsch L ^a   Heitz, R ^a   Sellin, R L ^a   Pohl, U W ^a   Bimberg, D ^a   Zakharov, N ^b   Werner, P ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

MOCVD; Monolayer splitting; Quantum dot; Ripening

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION; GROUND STATE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

MONOLAYER SPLITTING; RIPENING; SELF ORGANIZED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642385647     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.089     Document Type: Conference Paper

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