High-gain and low-threshold InAs quantum-dot lasers on InP

Applied Physics Letters

Volumn 87, Issue 24, 2005, Pages 1-3

  Caroff, P ^a   Paranthoen, C ^a   Platz, C ^a   Dehaese, O ^a   Folliot, H ^a   Bertru, N ^a   Labb C ^a   Piron, R ^a   Homeyer, E ^a   Le Corre, A ^a   Loualiche, S ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GROUND STATE; LASER APPLICATIONS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM DOTS;

GROWTH PROCEDUES; LASER STRUCTURES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 28844464361     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2146063     Document Type: Article

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