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Journal of Applied Physics

Volumn 107, Issue 7, 2010, Pages

Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots

(5) Ulloa, J M a,c Koenraad, P M a Bonnet Eymard, M b Ltoublon A b Bertru, N b

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b INSA DE RENNES (France)

c UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM MIGRATION; ATOMIC SCALE; CAPPING LAYER; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; GROWTH FRONT; IN0.53GA0.47AS; INAS QUANTUM DOTS; INP SUBSTRATES; LATTICE-MATCHED; QUANTUM DOT; SELF-ASSEMBLED; SURFACTANT EFFECTS; TRUNCATED PYRAMIDS;

SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SURFACE ACTIVE AGENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77951533764 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3361036 Document Type: Article

Times cited : (9)

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