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Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 516-519

Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE

(4) Matsuura, T a Miyamoto, T a Ohta, M a Koyama, F a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; GALLIUM;

ULTRA-THIN COVER LAYER; WAVELENGTH ELONGATION; WAVELENGTH EMISSION;

SEMICONDUCTOR QUANTUM DOTS;

EMITTING WAVELENGTHS; GROWTH PARAMETERS; INAS QUANTUM DOTS; LONG-WAVELENGTH EMISSIONS; LOW GROWTH RATE; OPTICAL CHARACTERIZATION; PHOTOLUMINESCENCE CHARACTERIZATION; ROOM TEMPERATURE;

EID: 33646269717 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200564158 Document Type: Conference Paper

Times cited : (8)

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