Carrier dynamics of type-II InAsGaAs quantum dots covered by a thin Ga As1-x Sbx layer

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Chang, Wen Hao ^a   Liao, Yu An ^a   Hsu, Wei Ting ^a   Lee, Ming Chih ^a   Chiu, Pei Chin ^b   Chyi, Jen Inn ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; CLARIFICATION; DYNAMICS; INDIUM ARSENIDE; LIGHT EMISSION; LUMINESCENCE; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM;

AMERICAN INSTITUTE OF PHYSICS (AIP); BAND ALIGNMENTS; BAND-BENDING; CARRIER DYNAMICS; DECAY TIME CONSTANTS; EXPONENTIAL DECAYS; HIGHER TEMPERATURES; LOCALIZED STATES; OPTICAL (PET) (OPET); PEAK SHIFTING; POWER DEPENDENCE; QUANTUM DOT (CO); QUANTUM DOTS (QDS); TEMPERATURE-DEPENDENT MEASUREMENTS; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 48249137799     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2964191     Document Type: Article

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