Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Liao, Yu An ^a   Hsu, Wei Ting ^a   Chiu, Pei Chin ^b   Chyi, Jen Inn ^b   Chang, Wen Hao ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; ANNEALING; INDIUM ARSENIDE; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM;

BAND ALIGNMENTS; BLUE-SHIFTS; EMISSION PROPERTIES; INAS QUANTUM DOTS; LOCALIZED STATE; PHOTO-LUMINESCENCE MEASUREMENTS; POST-GROWTH THERMAL ANNEALING; QD EMISSIONS; QUANTUM DOTS; RADIATIVE RECOMBINATION RATES; RECOMBINATION DYNAMICS; THERMAL-ANNEALING; TIME-RESOLVED;

SEMICONDUCTOR QUANTUM DOTS;

EID: 59849107083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3062979     Document Type: Article

References (18)

1. H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, P. Navaretti, K. M. Groom, M. Hopkinson, and R. A. Hogg, Appl. Phys. Lett. 0003-6951 10.1063/1.1897850 86, 143108 (2005).
2. J. M. Ripalda, D. Granados, Y. Gonzalez, A. M. Sanchez, S. I. Molina, and J. M. Garcia, Appl. Phys. Lett. 0003-6951 10.1063/1.2130529 87, 202108 (2005).
3. C. Y. Jin, H. Y. Liu, S. Y. Zhang, Q. Jiang, S. L. Liew, M. Hopkinson, T. J. Badcock, E. Nabavi, and D. J. Mowbray, Appl. Phys. Lett. 0003-6951 10.1063/1.2752778 91, 021102 (2007).
4. W. -S. Liu, D. M. T. Kuo, J. -I. Chyi, W. -Y. Chen, H. -S. Chang, and T. M. Hsu, Appl. Phys. Lett. 0003-6951 10.1063/1.2405872 89, 243103 (2006).
5. P. -C. Chiu, W. -S. Liu, M. -J. Shiau, J. -I. Chyi, W. -Y. Chen, H. -S. Chang, and T. -M. Hsu, Appl. Phys. Lett. 0003-6951 10.1063/1.2798601 91, 153106 (2007).
6. Y. D. Jang, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, J. Park, D. Lee, H. Y. Liu, M. J. Steer, and M. Hopkinson, Appl. Phys. Lett. 0003-6951 10.1063/1.2949741 92, 251905 (2008).
7. W. -H. Chang, Y. -A. Liao, W. -T. Hsu, M. -C. Lee, P. -C. Chiu, and J. -I. Chyi, Appl. Phys. Lett. 0003-6951 10.1063/1.2964191 93, 033107 (2008).
8. U. E. H. Laheld, F. B. Pedersen, and P. C. Hemmer, Phys. Rev. B 0163-1829 10.1103/PhysRevB.52.2697 52, 2697 (1995).
9. C. -K. Sun, G. Wang, J. E. Bowers, B. Brar, H. -R. Blank, H. Kroemer, and M. H. Pilkuhn, Appl. Phys. Lett. 0003-6951 10.1063/1.115693 68, 1543 (1996).
10. F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.4635 57, 4635 (1998).
11. R. B. Laghumavarapu, A. Moscho, A. Khoshakhlagh, M. El-Emawy, L. F. Lester, and D. L. Huffaker, Appl. Phys. Lett. 0003-6951 10.1063/1.2734492 90, 173125 (2007).
12. R. Leon, Y. Kim, C. Jagadish, M. Gal, J. Zou, and D. J. H. Cockayne, Appl. Phys. Lett. 0003-6951 10.1063/1.117467 69, 1888 (1996).
13. S. Malik, C. Roberts, R. Murray, and M. Pate, Appl. Phys. Lett. 0003-6951 10.1063/1.119763 71, 1987 (1997).
14. S. J. Xu, X. C. Wang, S. J. Chua, C. H. Wang, W. J. Fan, J. Jiang, and X. G. Xie, Appl. Phys. Lett. 0003-6951 10.1063/1.121595 72, 3335 (1998).
15. R. Leon, S. Fafard, P. G. Piva, S. Ruvimov, and Z. Liliental-Weber, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.R4262 58, R4262 (1998).
16. S. Fafard and C. N. Allen, Appl. Phys. Lett. 0003-6951 10.1063/1.125019 75, 2374 (1999).
17. T. M. Hsu, Y. S. Lan, W. -H. Chang, N. T. Yeh, and J. -I. Chyi, Appl. Phys. Lett. 0003-6951 10.1063/1.125863 76, 691 (2000).
18. S. F. Chichibu, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, and H. Okumura, J. Appl. Phys. 0021-8979 10.1063/1.1535746 93, 2051 (2003).