Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure

Nanotechnology

Volumn 22, Issue 5, 2011, Pages

  Lu, W ^a,b   Bozkurt, M ^c   Keizer, J G ^c   Rohel, T ^a,b   Folliot, H ^a,b   Bertru, N ^a,b   Koenraad, P M ^c  

^a UNIVERSITÉ EUROPÉENNE DE BRETAGNE   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; CONFORMAL GROWTH; CROSS-SECTIONAL SCANNING; GAAS; GROWTH FRONT; GROWTH SURFACES; INAS; INAS/INP; INP; QUANTUM DOT; QUANTUM DOTS; SHAPE AND SIZE; STRAIN INHOMOGENEITY;

ANTIMONY COMPOUNDS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; INDIUM ARSENIDE; PHOTOLUMINESCENCE SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79251540868     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/5/055703     Document Type: Article

References (21)

1. Bhattacharya P, Mi Z, Yang J, Basu D and Saha D 2009 J. Cryst. Growth 311 1625
2. Caroff P et al 2005 Appl. Phys. Lett. 87 243107
3. Akiyama T, Ekawa M, SugawaraM, Kawaguchi K, Sudo H, Kuramata A, Ebe H and Arakawa Y 2005 IEEE Photon. Technol. Lett. 17 1614
4. Lelarge F et al 2007 IEEE J. Quantum Electron. 13 111
5. Lu Z G, Liu J R, Poole P J, Raymond S, Barrios P J, Poitras D, Pakulski G, Grant P and Roy-Guay D 2009 Opt. Express 17 13609
6. Merghem K, Akrout A, Martinez A, Aubin G, Ramdane A, Lelarge F and Duan G H 2009 Appl. Phys. Lett. 94 021107
7. Kawaguchi K, Yasuoka N, Ekawa M, Ebe H, Akiyama T, SugawaraM and Arakawa Y 2008 Appl. Phys. Lett. 93 121908
8. Keizer J G et al 2010 Nanotechnology 21 215705
9. He J, Wu Y and Wang K L 2010 Nanotechnology 21 255705
10. Liu H Y, Tey C M, Sellers I R, Badcock T J, Mowbray D J, Skolnick M S, Beanland R, Hopkinson M and Cullis A G 2005 J. Appl. Phys. 98 083516
11. Paranthoen C, Bertru N, DeHaese O, Le Corre A, Loualiche S, Lambert B and Patriarche G 2001 Appl. Phys. Lett. 78 1751
12. Ulloa J M, Gargallo-Caballero R, Bozkurt M, del Moral M, Guzman A, Koenraad P M and Hierro A 2010 Phys. Rev. B 81 165305
13. Ulloa J M, Drouzas I W D, Koenraad P M, Mowbray D J, Steer M J, Liu H Y and Hopkinson M 2007 Appl. Phys. Lett. 90 213105
14. Harmand J C, Li L H, Patriarche G and Travers L 2004 Appl. Phys. Lett. 84 3981
15. Timm R, Eisele H, Lenz A, Ivanova L, Balakrishnan G, Huffaker D L and Dahne M 2008 Phys. Rev. Lett. 101 256101
16. Lacombe D, Ponchet A, Frechengues S, Drouot V, Bertru N, Lambert B and Le Corre A 1999 Appl. Phys. Lett. 74 1680
17. Fuster D, Gonzalez M U, Gonzalez L, Gonzalez Y, Ben T, Ponce A, Molina S I and Martinez-Pastor J 2004 Appl. Phys. Lett. 85 1424
18. Ulloa J M et al 2007 J. Appl. Phys. 101 081707
19. Qianghua X, Chen P and Madhukar A 1994 Appl. Phys. Lett. 65 2051
20. Stringfellow B 1983 J. Appl. Phys. 54 404
21. Jin C Y, Liu H Y, Zhang S Y, Jiang Q, Liew S L, Hopkinson M, Hopkinson M, Badcock T J, Nabavi E and Mowbray D J 2007 Appl. Phys. Lett. 91 021102