SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 65-76

Ferroelectric thin film depositions for various types of FeRAMs (Ferroelectric Random Access Memories)

(2) Fujisaki, Yoshihisa a Ishiwara, Hiroshi b

a HITACHI LTD (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; FERROELECTRIC MATERIALS; FLASH MEMORY; GATES (TRANSISTOR); GELS; GRAIN GROWTH; RANDOM ACCESS STORAGE; SOL-GELS;

FERROELECTRIC RANDOM ACCESS MEMORIES (FERAM); NONVOLATILE MEMORIES; PROCESS TECHNOLOGIES; REMNANT POLARIZATIONS;

THIN FILMS;

EID: 20344365317 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (6)

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