A novel cross-spacer phase change memory with ultra-small lithography independent contact area

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 319-322

  Chen, W S ^a   Lee, C M ^a   Chao, D S ^a   Chen, Y C ^a   Chen, F ^a   Chen, C W ^a   Yen, P H ^a   Chen, M J ^a   Wang, W H ^a   Hsiao, T C ^a   Yeh, J T ^a   Chiou, S H ^a   Liu, M Y ^b   Wang, T C ^b   Chein, L L ^c   Huang, C M ^c   Shih, N T ^d   Tu, L S ^d   Huang, D ^e   Yu, T H ^e   Kao, M J ^a   Tsai, M J ^a   more..

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b POWERCHIP TECHNOLOGY CORPORATION   (Taiwan)

^c ProMOS Technologies Inc   (Taiwan)

^d NANYA TECHNOLOGY CORPORATION   (Taiwan)

^e WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; LITHOGRAPHY;

CONTACT AREAS; PHASE CHANGES; PHASE-CHANGE MEMORIES; ULTRA-SMALL;

PHASE CHANGE MEMORY;

EID: 50249091055     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418935     Document Type: Conference Paper

References (4)

1. S. J. Ahn et al., "Highly reliable 50nm contact cell technology for 256Mb PRAM", Symposium on VLSI Tech. Dig., p.98, 2005.
2. F. Pellizzer et al, "A 90nm phase change memory technology for stand-alone non-volatile memory applications", Symposium on VLSI Tech. Dig., p.150, 2006.
3. J. I. Lee et al., "Highly scalable phase change memory with CVD GeSbTe for sub 50nm generation", Symposium on VLSI Tech. Dig., p.102, 2007.
4. M. Breitwisch et al., "Novel lithography-independent pore phase change memory", Symposium on VLSI Tech. Dig., p.100, 2007.