A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 234-235

  Miura, K ^a   Kawahara, T ^a   Takemura, R ^a   Hayakawa, J ^a,b   Ikeda, S ^b   Sasaki, R ^b   Takahashi, H ^a   Matsuoka, H ^a   Ohno, H ^b  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERRIMAGNETISM; FERROMAGNETISM; MAGNETIC DEVICES; MAGNETISM; POLARIZATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS;

CURRENT DISPERSIONS; MAGNETIC TUNNEL JUNCTIONS (MTJS); SPIN-TRANSFER TORQUE (STT); STABILITY FACTORS; VLSI TECHNOLOGIES;

SPIN DYNAMICS;

EID: 47249124447     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339706     Document Type: Conference Paper

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