An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 175-176

  Ha, Y H ^a   Yi, J H ^a   Horii, H ^a   Park, J H ^a   Joo, S H ^a   Park, S O ^a   Chung, U In ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; PHASE CHANGING CIRCUITS; PHOTOLITHOGRAPHY; PHASE CHANGE MEMORY;

POWER CONSUMPTION;

RANDOM ACCESS STORAGE; ELECTRIC POWER UTILIZATION;

CONTACT AREAS; CONTACT TYPE; EDGE CONTACTS; HIGH RESISTIVE STATE; LOW-POWER CONSUMPTION; LOWER-POWER CONSUMPTION; OVONIC UNIFIED MEMORY; PHASE CHANGE RAMS; PHASE-CHANGE RANDOM ACCESS MEMORY; THERMAL ENVIRONMENT;

EID: 0141538290     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Stefan Lai and Tyler Lowery, EDM Tech. Dig. (2001)
2. M. Gill et.al., ISSCC Dig. Of Tech. Papas, p.202 (2002)
3. J. Mumon et. al., NVMTS Dig. (2002)
4. Y.N. Hwang et. al., NVSMW (2003)