A 90nm phase change memory technology for stand-alone non-volatile memory applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 122-123

  Pellizzer, F ^a   Benvenuti, A ^a   Gleixner, B ^b   Kim, Y ^b   Johnson, B ^b   Magistretti, M ^a   Marangon, T ^a   Pirovano, A ^a   Bez, R ^a   Atwood, G ^b  

^a STMICROELECTRONICS   (Italy)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PROGRAMMING CURRENTS; STORAGE ELEMENTS;

BIPOLAR TRANSISTORS; CHALCOGENIDES; ELECTRIC CURRENTS; NONVOLATILE STORAGE; SEMICONDUCTOR DEVICE MANUFACTURE;

PHASE CHANGE MEMORY;

EID: 41149134446     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Lai, "Current Status of the Phase Change Memory and its Future", IEDM Tech. Dig., 2003.
2. G. Atwood and R. Bez, "Current Status of Chalcogenide Phase Change Memory", DRC, 2005.
3. F. Pellizzer et al., "Novel μTrench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications", Symp. On VLSI Tech., 2004.
4. S. Lai and T.Lowrey, "OUM - A 180nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications", IEDM Tech. Dig., 2001.