World smallest 0.34μm2 COB cell 1T1C 64Mb FRAM with new sensing architecture and highly reliable MOCVD PZT integration technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 124-125

  Kang, Y M ^a   Joo, H J ^a   Park, J H ^a   Kang, S K ^a   Kim, J H ^a   Oh, S G ^a   Kim, H S ^a   Kang, J Y ^a   Jung, J Y ^a   Choi, D Y ^a   Lee, E S ^a   Lee, S Y ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

1T1C; FRAM; PZT

Indexed keywords

CAPACITORS; ELECTRIC NETWORK ANALYSIS; ELECTROCHEMICAL ELECTRODES; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

CAPACITOR LAYOUT; FRAM; MULTI-REFERENCE CELL EQUALIZING SCHEME (MRCE);

RANDOM ACCESS STORAGE;

EID: 41149120027     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Y. Lee and Kinam Kim, IEDM Tech. Dig., p547, 2002
2. J.-H. Kim et al., IEDM Tech. Dig., p889, 2005
3. J. H. Park et al., IEDM Tech. Dig., p594, 2004
4. H. J. Joo et al., Symp. on VLSI Tech. Dig., p148, 2004
5. Y. M. Kang et al., Symp. on VLSI Tech. Dig., p102, 2005