SCOPUS 정보 검색 플랫폼

Volumn 29, Issue 11, 2004, Pages

Nonvolatile magnetoresistive random-access memory based on magnetic tunnel junctions

Author keywords

Magnetic memory; Magnetic switching; Magnetic tunnel junctions; MRAM; MTJ; Nonvolatile memory

Indexed keywords

FERROMAGNETISM; MAGNETIC ANISOTROPY; MAGNETIZATION; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; SWITCHING;

MAGNETIC SWITCHING; MAGNETIC TUNNEL JUNCTIONS; NONVOLATILE MEMORY;

DATA STORAGE EQUIPMENT;

EID: 19744382167 PISSN: 08837694 EISSN: None Source Type: Journal
DOI: 10.1557/mrs2004.234 Document Type: Article

Times cited : (16)

References (10)

1
- 0029632353
- T. Miyazaki and N. Tezuka, J. Magn. Magn. Mater. 139 (1995) p. L231.
- (1995) J. Magn. Magn. Mater. , vol.139
- Miyazaki, T.¹ Tezuka, N.²

2
- 11944262717
- J.S. Moodera, L.R. Kinder, T.M.Wong, and R. Meservey, Phys. Rev. Lett. 74 (1995) p. 3273.
- (1995) Phys. Rev. Lett. , vol.74 , pp. 3273
- Moodera, J.S.¹ Kinder, L.R.² Wong, T.M.³ Meservey, R.⁴

3
- 20844455024
- S. Tehrani, J.M. Slaughter, M. DeHerrera, B.N. Engel, N.D. Rizzo, J. Salter, M. Durlam, R.W. Dave, J. Janesky, and G. Grynkewich, Proc. IEEE 91 (5) (2003) p. 703.
- (2003) Proc. IEEE , vol.91 , Issue.5 , pp. 703
- Tehrani, S.¹ Slaughter, J.M.² Deherrera, M.³ Engel, B.N.⁴ Rizzo, N.D.⁵ Salter, J.⁶ Durlam, M.⁷ Dave, R.W.⁸ Janesky, J.⁹ Grynkewich, G.¹⁰

4
- 84888972608
- "Method of writing to scalable magnetoresistance random-access memory element," U.S. Patent No. 6,545,906 (April 8)
- L. Savtchenko, B.N. Engel, N.D. Rizzo, M.F. DeHerrera, and J.A. Janesky, "Method of writing to scalable magnetoresistance random-access memory element," U.S. Patent No. 6,545,906 (April 8, 2003).
- (2003)
- Savtchenko, L.¹ Engel, B.N.² Rizzo, N.D.³ Deherrera, M.F.⁴ Janesky, J.A.⁵

5
- 33745616432
- M. Durlam, D. Addie, J. Åkerman, B. Butcher, P. Brown, J. Chan, M. DeHerrera, B.N. Engel, B. Feil, G. Grynkewich, J. Janesky, M. Johnson, K. Kyler, J. Molla, J. Martin, K. Nagel, J. Ren, N.D. Rizzo, T. Rodriguez, L. Savtchenko, and E.J. Salter, IEEE Int. Electron Devices Meeting 2003 (2003) p. 34.6.1
- (2003) IEEE Int. Electron Devices Meeting , vol.2003
- Durlam, M.¹ Addie, D.² Åkerman, J.³ Butcher, B.⁴ Brown, P.⁵ Chan, J.⁶ Deherrera, M.⁷ Engel, B.N.⁸ Feil, B.⁹ Grynkewich, G.¹⁰ Janesky, J.¹¹ Johnson, M.¹² Kyler, K.¹³ Molla, J.¹⁴ Martin, J.¹⁵ Nagel, K.¹⁶ Ren, J.¹⁷ Rizzo, N.D.¹⁸ Rodriguez, T.¹⁹ Savtchenko, L.²⁰ Salter, E.J.²¹ more..

6
- 84888976345
- in press
- ; B.N. Engel, J. Åkerman, B. Butcher, R.W. Dave, M. DeHerrera, M. Durlam, G. Grynkewich, J. Janesky, S.V. Pietambaram, N.D. Rizzo, J.M. Slaughter, K. Smith, J.J. Sun, and S. Tehrani, IEEE Trans. Mag. (2004) in press.
- (2004) IEEE Trans. Mag.
- Engel, B.N.¹ Åkerman, J.² Butcher, B.³ Dave, R.W.⁴ Deherrera, M.⁵ Durlam, M.⁶ Grynkewich, G.⁷ Janesky, J.⁸ Pietambaram, S.V.⁹ Rizzo, N.D.¹⁰ Slaughter, J.M.¹¹ Smith, K.¹² Sun, J.J.¹³ Tehrani, S.¹⁴

7
- 11944269751
- S.S.P. Parkin, N. More, and K.P. Roche, Phys. Rev. Lett. 64 (1990) p. 2304.
- (1990) Phys. Rev. Lett. , vol.64 , pp. 2304
- Parkin, S.S.P.¹ More, N.² Roche, K.P.³

8
- 6144288376
- W.J. Gallagher, S.S.P. Parkin, Y. Lu, X.P. Bian, A. Marley, R.A. Altman, S.A. Rishton, K.P. Roche, C. Jahnes, T.M. Shaw, and G. Xiao, J. Appl. Phys. 81 (1997) p. 3741.
- (1997) J. Appl. Phys. , vol.81 , pp. 3741
- Gallagher, W.J.¹ Parkin, S.S.P.² Lu, Y.³ Bian, X.P.⁴ Marley, A.⁵ Altman, R.A.⁶ Rishton, S.A.⁷ Roche, K.P.⁸ Jahnes, C.⁹ Shaw, T.M.¹⁰ Xiao, G.¹¹

9
- 0033183994
- S. Tehrani, J.M. Slaughter, E. Chen, M. Durlam, J. Shi, and M. DeHerrera, IEEE Trans. Mag. 35 (2000) p. 2814.
- (2000) IEEE Trans. Mag. , vol.35 , pp. 2814
- Tehrani, S.¹ Slaughter, J.M.² Chen, E.³ Durlam, M.⁴ Shi, J.⁵ Deherrera, M.⁶

10
- 0034140524
- M. Johnson, IEEE Spectrum 37 (2) (2000) p. 33.
- (2000) IEEE Spectrum , vol.37 , Issue.2 , pp. 33
- Johnson, M.¹

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