Lateral phase change random access memory cell design for low power operation

Microsystem Technologies

Volumn 13, Issue 2, 2007, Pages 169-172

  Merget, F ^a   Kim, D H ^a   Bolivar, P Haring ^a   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC PROPERTIES; LOGIC DESIGN; RANDOM ACCESS STORAGE; THERMAL EFFECTS;

CURRENT CONSUMPTION; PHASE CHANGE; PHASE CHANGE RANDOM ACCESS MEMORY (PCRAM); RANDOM ACCESS MEMORY CELLS;

ELECTRIC BATTERIES;

EID: 33751103904     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-006-0141-z     Document Type: Conference Paper

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