A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2003, Pages 177-178

  Horii, H ^a   Yi, J H ^a   Park, J H ^a   Ha, Y H ^a   Baek, I G ^a   Park, S O ^a   Hwang, Y N ^a   Lee, S H ^a   Kim, Y T ^a   Lee, K H ^a   Chung, U In ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GERMANIUM COMPOUNDS; NITROGEN; RANDOM ACCESS STORAGE; ANTIMONY COMPOUNDS; GRAIN GROWTH; PHASE CHANGE MEMORY; SEMICONDUCTOR DOPING; TELLURIUM COMPOUNDS;

WRITING CURRENT;

THIN FILMS; NITROGEN;

CELL TECHNOLOGY; DEVICE SIMULATIONS; GESBTE FILM; IN-PHASE; N-DOPED; NITROGEN-DOPING; PHASE CHANGE RAMS; PHASE-CHANGE RANDOM ACCESS MEMORY; THIN-FILMS; WRITING CURRENTS;

EID: 0141830841     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Y.N. Hwang et al., NVSMW, 2003 (to be presented)
2. Hun Seo et al., Jpn. J. Appl. Phys. Vol. 39, 2000, p 745