Reduction of reset current in NiO-ReRAM brought about by ideal current limiter

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Volumn , Issue , 2007, Pages 66-67

  Kinoshita, K ^a   Tsunoda, K ^a   Sato, Y ^a   Noshiro, H ^a   Yamazaki, Y ^a   Fukano, T ^a   Yagaki, S ^a   Aoki, M ^a   Sugiyama, Y ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 48649109824     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2007.4290583     Document Type: Conference Paper

References (4)

1. I. G. Baek et al., Tech. Digest IEDM 2004, p. 587.
2. T. Fang et al., Tech. Digest IEDM 2006, p.789.
3. S. Seo et al., Apply. Phys. Lett. 85, 5655 (2004).
4. C. Rohde et al., Apply. Phys. Lett. 86, 262907 (2006).