Doped In-Ge-Te phase change memory featuring stable operation and good data retention

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 307-310

  Morikawa, T ^a   Kurotsuchi, K ^a   Kinoshita, M ^a   Matsuzaki, N ^a   Matsui, Y ^a   Fujisaki, Y ^a   Hanzawa, S ^a   Kotabe, A ^a   Terao, M ^a   Moriya, H ^a   Iwasaki, T ^a   Matsuoka, M ^b   Nitta, F ^b   Moniwa, M ^b   Koga, T ^b   Takaura, N ^a  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRON DEVICES; GERMANIUM; OPTICAL DESIGN;

CHALCOGENIDE; DATA-RETENTION; GOOD DATA; MEMORY CELLS; PHASE-CHANGE MEMORIES; STABLE OPERATIONS; THERMAL STABILITY;

PHASE CHANGE MEMORY;

EID: 50249088057     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418932     Document Type: Conference Paper

References (7)

1. A. Redaelli, D. Ielmini, A. L. Lacaita, F. Pellizzer, A. Pirovano, and R. Bez, IEDM Tech. Dig., 761 (2005)
2. N. Matsuzaki, K. Kurotsuchi, Y. Matsui, O. Tonomura, N. Yamamoto, Y. Fujisaki et al., IEDM Tech. Dig., 758 (2005)
3. H. Horii, J.H. Yi, J.H. Park, Y.H Ha, I.G. Baek, S.O. Park et al., Symp. on VLSI Tech. Dig., 177 (2003)
4. N. Kh. Abrikosov and G. T. Danilova-Dobryakova., Izv. Akad. Auk. SSSR Neorg. Mater. 1, 204 (1965)
5. Y. N. Nasirov, M. I. Zargarova and M. M. Akperov, Dokl. AzSSR, 24, No.7, 28 (1968)
6. Y. C. Chen, C. T. Rettner, S. Raoux, G. W. Burr, S. H. Chen, R. M. Shelby et al., IEDM Tech. Dig., 777 (2006)
7. Martijn H. R. Lankhorst, Bas W. S. M. M. Ketelaars and R. A. M. Wolters, Nature Materials, Vol.4, 347 (2005)