Reliability of 4-Mbit Toggle MRAM

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 191-200

  Åkerman, Johan ^a   Brown, Philip ^a   Butcher, Brian ^a   Dave, Renu ^a   Deherrera, Mark ^a   Durlam, Mark ^a   Engel, Brad ^a   Fuchs, Earl ^a   Griswold, Mark ^a   Grynkewich, Greg ^a   Janesky, Jason ^a   Martin, John ^a   Nahas, Joseph ^a   Pietambaram, Srinivas ^a   Rizzo, Nick ^a   Slaughter, Jon ^a   Smith, Ken ^a   Sun, Ji Jun ^a   Tehrani, Saied ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); MAGNETORESISTIVE TUNNEL JUNCTION (MTJ); OPERATING CONDITIONS; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ANTIFERROMAGNETIC MATERIALS; CMOS INTEGRATED CIRCUITS; DURABILITY; ELECTRIC BREAKDOWN; MAGNETIC FILMS; MAGNETORESISTANCE; NONVOLATILE STORAGE; RELIABILITY; TUNNEL JUNCTIONS;

RANDOM ACCESS STORAGE;

EID: 20344384250     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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