Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 18-19

  Pellizzer, F ^a   Pirovano, A ^a   Ottogalli, F ^a   Magistretti, M ^a   Scaravaggi, M ^a   Zuliani, P ^a   Tosi, M ^a   Benvenuti, A ^a   Besana, P ^a   Cadeo, S ^a   Marangon, T ^a   Morandi, R ^a   Piva, R ^a   Spandre, A ^a   Zonca, R ^a   Modelli, A ^a   Varesi, E ^a   Lowrey, T ^b   Lacaita, A ^c   Casagrande, G ^a   Cappelletti, P ^a   Bez, R ^a   more..

^a STMICROELECTRONICS   (Italy)

^b Ovonyx Technologies Inc   (United States)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DURABILITY; ELECTRIC CURRENTS; NONVOLATILE STORAGE; OPTIMIZATION; PHASE CHANGING CIRCUITS; SCANNING ELECTRON MICROSCOPY;

OVONIC UNIFIED MEMORY (OUM); PHASE-CHANGE MEMORIES; SCALABILITY;

CMOS INTEGRATED CIRCUITS;

EID: 4544229593     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Lai, "Current status of the phase-change memory and its future", IEDM Tech. Dig., 2003.
2. A. Pirovano et al., "Scaling analysis of phase-change memory technology", IEDM Tech. Dig., 2003.
3. F.Bedeschi et al., "An 8Mb Demonstrator for High Density 1.8V Phase-Change Memories", submitted to Symp. on VLSI Circ., 2004.