Energy band states of an oxygen-doped GeSbTe phase-change memory cell: Mechanism of low-voltage operation

Materials Research Society Symposium Proceedings

Volumn 997, Issue , 2007, Pages 293-298

  Fujisaki, Yoshihisa ^a   Matsuzaki, Nozomu ^a   Kurotsuchi, Kenzo ^a   Morikawa, T ^a   Kinoshita, M ^a   Kitai, N ^b   Hanzawa, Satoru ^a   Moriya, H ^c   Takaura, Norikatsu ^a   Terao, M ^a   Matsuoka, M ^d   Koga, Tsuyoshi ^d   Moniwa, M ^d  

^a HITACHI LTD   (Japan)

^b Hitachi USIL Systems   (Japan)

^c Mechanical Engineering Research Lab   (Japan)

^d Ranesas Technology Corp   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 38549181844     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0997-i11-01     Document Type: Conference Paper

References (4)

1. S. L. Cho et al., Symp. On VLSI Technology, pp. 96-97, 2005.
2. S. Lai, IEDM Tech. Dig., pp. 10.1.1-10.1.4, 2003.
3. N. Matsuzaki et al., IEDM Tech. Dig., pp. 31.1.1-31.1.4, 2005.
4. Y. Marsui et al., IEDM Tech. Dig., pp. 30.1.1-30.1.4, 2006.