Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Microelectronics Reliability

Volumn 44, Issue 7, 2004, Pages 1101-1107

  Yang, L ^a   Asenov, A ^a   Watling, J R ^a   Borici M ^a   Barker, J R ^a   Roy, S ^a   Elgaid, K ^a   Thayne, I ^a   Hackbarth, T ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON MOBILITY; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CHANNEL DOPING; DRIVE CURRENT; GATE-TO-CHANNEL SEPARATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2942707762     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.04.003     Document Type: Conference Paper

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