Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Li, Z ^a,b   Schram, T ^a   Pantisano, L ^a   Conard, T ^a   Van Elshocht, S ^a   Deweerd, W ^a,d   De Gendt, S ^a,b   De Meyer, K ^a,b   Stesmans, A ^b   Shamuilia, S ^b   Afanas'Ev, V V ^b   Akheyar, A ^a   Brunco, D P ^a   Yamada, N ^c   Lehnen, P ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Canon ANELVA Technix Corporation   (Belgium)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HEAT TREATMENT; INTERFACES (MATERIALS); THERMODYNAMICS; THIN FILMS; VOLTAGE CONTROL;

INTERNAL PHOTOEMISSION; KINETICS POINTS; METAL GATES;

RUTHENIUM COMPOUNDS;

EID: 33847186686     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2429730     Document Type: Article

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