Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1588-1591

  Kim, Woong Sun ^a   Kim, Tae Sub ^a   Kang, Byung Woo ^a   Ko, Myoung Gyun ^a   Park, Sang Kyun ^a   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC PHYSICS; ATOMS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CYCLOTRON RESONANCE; CYCLOTRONS; DESCALING; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; HAFNIUM; HAFNIUM COMPOUNDS; LANTHANUM; LANTHANUM ALLOYS; LEAKAGE CURRENTS; MAGNETISM; OXIDE FILMS; OXIDES; PARTICLE ACCELERATORS; PLASMA DIAGNOSTICS; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RESONANCE; THICK FILMS;

AS-DEPOSITED; ATOMIC LAYER DEPOSITIONS; CRYSTALLINE STRUCTURES; DEPOSITION TEMPERATURE; ELECTRICAL PROPERTIES; FIXED CHARGES; HAFNIUM OXIDE; LANTHANUM PRECURSORS; LEAKAGE CURRENT DENSITIES; REACTANT GASSES; TETRAKIS; THIN FILMS; TRANSMISSION ELECTRON;

ATOMIC LAYER DEPOSITION;

EID: 49749098935     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2936233     Document Type: Article

References (15)

1. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002).
2. Y. Wu, M. Yang, A. Chin, W. Chen, and C. Kwei, IEEE Electron Device Lett. 21, 341 (2000).
3. Y. Kim, K. Miyauchi, S. Ohmi, K. Tsutsui, and H. Iwai, Microelectron. J. 36, 41 (2005).
4. A. Dimoulas, G. Vellianitis, G. Mavrou, G. Postolopoulos, A. Travlos, C. Wiemer, M. Fanciulli, and Z. M. Rittersma, Appl. Phys. Lett. 85, 3205 (2004).
5. Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriuni, Appl. Phys. Lett. 89, 032903 (2006).
6. B. S. Lim, A. Rahtu, and R. G. Gordon, Nat. Mater. 2, 749 (2003).
7. S. M. Sze, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 1981).
8. Z. M. Rittersma, J. C. Hooker, and G. Vellianitis, J. Appl. Phys. 99, 024508 (2006).
9. A. Dimoulas, G. Vellianitis, G. Mavrou, G. Apostolopoulos, and A. Travlos, Appl. Phys. Lett. 85, 3205 (2004).
10. S. J. Jo, J. S. Ha, N. K. Park, D. K. Kang, and B. H. Kim, Thin Solid Films 513, 253 (2006).
11. B. Y. Kim, M. G. Ko, E. J. Lee, M. S. Hong, Y. J. Jeon, and J. W. Park, J. Korean Phys. Soc. 49, 1303 (2006).
12. S. Y. No, D. Eom, C. S. Hwang, and H. J. Kim, J. Appl. Phys. 100, 024111 (2006).
13. G. He, M. Liu, L. Q. Zhu, M. Chang, Q. Fang, and L. D. Zhang, Surf. Sci. 576, 67 (2005).
14. C. C. Cheng, C. H. Chien, C. W. Chen, S. L. Hsu, M. Y. Yang, C. C. Huang, F. L. Yang, and C. Y. Chang, Microelectron. Eng. 80, 30 (2005).
15. D. Eom, S. Y. No, C. S. Hwang, and H. J. Kim, J. Electrochem. Soc. 154, G49 (2007).