The role of the HfO2-TiN interface in capacitance-voltage nonlinearity of Metal-Insulator-Metal capacitors

Thin Solid Films

Volumn 517, Issue 23, 2009, Pages 6334-6336

  Wenger, Ch ^a   Lukosius, M ^a   Weidner, G ^a   Mussig H J ^a   Pasko, S ^b   Lohe, Ch ^b  

^a IHP   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

High k dielectric; MIM capacitor; Nonlinearity

Indexed keywords

BACK END OF LINES; CAPACITANCE VOLTAGE; DIELECTRIC STACK; HIGH-K DIELECTRIC; INTERFACIAL LAYER; INTERFACIAL-LAYER THICKNESS; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITOR; MIM CAPACITORS; MIXED SIGNAL; NONLINEARITY; RADIO FREQUENCY CIRCUIT; TIO; VOLTAGE COEFFICIENT;

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

CAPACITANCE;

EID: 68349104402     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.074     Document Type: Article

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