Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high- k Prx Al2-x O3 (x=0-2) dielectrics on TiN for dynamic random access memory applications

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Schroeder, T ^a   Lupina, G ^a   Sohal, R ^a   Lippert, G ^a   Wenger, Ch ^a   Seifarth, O ^b   Tallarida, M ^b   Schmeisser, D ^b  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; PERMITTIVITY; SURFACE CHEMISTRY; SYNCHROTRON RADIATION; THREE DIMENSIONAL; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL-INSULATOR-METAL CAPACITORS; RANDOM ACCESS MEMORY APPLICATIONS; WIDE BAND GAP INSULATORS;

DIELECTRIC MATERIALS;

EID: 34547201517     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749468     Document Type: Article

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