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Volumn 19, Issue 6, 2001, Pages 2133-2136

Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; MASS SPECTROMETRY; OXYGEN; OZONE; PHOTORESISTS; PLASMA ETCHING; RUTHENIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SPUTTER DEPOSITION; TEMPERATURE; THIN FILMS;

EID: 0035519183     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1415517     Document Type: Article
Times cited : (35)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.