Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2133-2136

  Nakahara, M ^a   Tsunekawa, S ^a   Watanabe, K ^a   Arai, T ^a   Yunogami, T ^b   Kuroki, K ^b  

^a HITACHI LTD   (Japan)

^b Elpida Memory Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; MASS SPECTROMETRY; OXYGEN; OZONE; PHOTORESISTS; PLASMA ETCHING; RUTHENIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SPUTTER DEPOSITION; TEMPERATURE; THIN FILMS;

ETCH SELECTIVITY; QUADRUPOLE MASS SPECTROMETRY; REACTIVE SPUTTERING; THERMAL DESORPTION SPECTROSCOPY; ULTRAVIOLET ABSORPTION SPECTROMETRY; X-RAY FLUORESCENCE ANALYSIS;

RUTHENIUM;

EID: 0035519183     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1415517     Document Type: Article

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