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Volumn 19, Issue 6, 2001, Pages 2133-2136
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Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION SPECTROSCOPY;
MASS SPECTROMETRY;
OXYGEN;
OZONE;
PHOTORESISTS;
PLASMA ETCHING;
RUTHENIUM COMPOUNDS;
SCANNING ELECTRON MICROSCOPY;
SILICON WAFERS;
SPUTTER DEPOSITION;
TEMPERATURE;
THIN FILMS;
ETCH SELECTIVITY;
QUADRUPOLE MASS SPECTROMETRY;
REACTIVE SPUTTERING;
THERMAL DESORPTION SPECTROSCOPY;
ULTRAVIOLET ABSORPTION SPECTROMETRY;
X-RAY FLUORESCENCE ANALYSIS;
RUTHENIUM;
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EID: 0035519183
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1415517 Document Type: Article |
Times cited : (35)
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References (14)
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