Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes

Microelectronic Engineering

Volumn 75, Issue 4, 2004, Pages 389-396

  Westlinder, Jörgen ^a   Sjöblom, Gustaf ^a   Olsson, Jörgen ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; NITROGEN; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICA; SPUTTER DEPOSITION; STOICHIOMETRY; THICKNESS MEASUREMENT;

GATE DEPLETION; METAL GATE TECHNOLOGY; NITROGEN GAS FLOW; WORK FUNCTIONS;

MOS CAPACITORS;

EID: 7544219814     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.061     Document Type: Article

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