Physically based models of electromigration: From Black's equation to modern TCAD models

Microelectronics Reliability

Volumn 50, Issue 6, 2010, Pages 775-789

  de Orio, R L ^a   Ceric, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Electromigration; Interconnects; Modeling; TCAD

Indexed keywords

BLACK'S EQUATION; CHRONOLOGICAL ORDER; ELECTROMIGRATION FAILURE MECHANISM; ELECTROMIGRATION FAILURES; INTERCONNECT STRUCTURES; MATHEMATICAL MODELING; METAL LINE; METALLIZATION STRUCTURES; PHYSICALLY BASED MODELS; THREE DIMENSIONAL SIMULATIONS;

ELECTROMIGRATION; THREE DIMENSIONAL COMPUTER GRAPHICS;

THREE DIMENSIONAL;

EID: 77953131130     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.01.007     Document Type: Article

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