Stress-induced electromigration backflow effect in copper interconnects

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 2, 2006, Pages 175-180

  Ney, David ^a   Federspiel, Xavier ^b   Girault, Valerie ^a   Thomas, Olivier ^c   Gergaud, Patrice ^d  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

^c AIX MARSEILLE UNIVERSITY   (France)

^d CEA LETI   (France)

Author keywords

Black's model; Blech effect; Copper; Electromigration (EM); Interconnect; Lifetime extrapolation; Threshold product

Indexed keywords

COPPER OXIDES; DIELECTRIC PROPERTIES; ELECTROMIGRATION; ELECTRONICS PACKAGING; EXTRAPOLATION; THERMAL EFFECTS; THRESHOLD ELEMENTS;

BLACK'S MODEL; BLECH EFFECTS; INTERCONNECT; LIFETIME EXTRAPOLATION; THRESHOLD PRODUCTS;

SEMICONDUCTOR MATERIALS;

EID: 33748108534     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.877862     Document Type: Conference Paper

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