Effect of interface strength on electromigration-induced inlaid copper interconnect degradation: Experiment and simulation

Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques

Volumn 96, Issue 9, 2005, Pages 966-971

  Zschech, Ehrenfried ^a,f   Engelmann, Hans Jürgen ^a   Meyer, Moritz Andreas ^a   Kahlert, Volker ^a   Vairagar, Anand V ^a,b,c   Mhaisalkar, Subodh G ^b   Krishnamoorthy, Ahila ^c   Yan, Minyu ^d   Tu, K N ^d   Sukharev, Valeriy ^e  

^a IBM MICROELECTRONICS   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e AGERE SYSTEMS   (United States)

^f Advanced Development ^*  (Germany)

Author keywords

Electromigration; Interface; Microstructure

Indexed keywords

COMPUTER SIMULATION; ELECTROMIGRATION; EMBEDDED SYSTEMS; INTERFACES (COMPUTER); OPTICAL INTERCONNECTS; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY;

COPPER INTERCONNECT; IN SITU MICROSCOPY; IN SITU SCANNING;

ELECTRIC POWER SYSTEM INTERCONNECTION;

EID: 27144508419     PISSN: 00443093     EISSN: None     Source Type: Journal    
DOI: 10.3139/146.101127     Document Type: Article

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