Physically based simulation of electromigration-induced degradation mechanisms in dual-inlaid copper interconnects

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 24, Issue 9, 2005, Pages 1326-1335

  Sukharev, Valeriy ^a,b  

^a Ponte Solutions Inc   (United States)

^b LSI Advanced Development Laboratory   (United States)

Author keywords

Elecromigration; Interconnect; Interface; Simulation; Via; Void

Indexed keywords

INTERCONNECTS; INTERFACES; VIA; VOIDS;

ALUMINUM; COMPUTER SIMULATION; COPPER; DEGRADATION; DIFFUSION; ELECTROMIGRATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NUCLEATION; SIMULATION; STRENGTHENING (METAL);

INTERCONNECTION NETWORKS;

EID: 27644559566     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2005.852061     Document Type: Article

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