A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 1, 2009, Pages 9-19

  Ceric, Hajdin ^a   Lacerda De Orio, Roberto ^a   Cervenka, Johann ^a   Selberherr, Siegfried ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Electromigration; Interconnect; Layout design; Physical modeling; Reliability; Simulation

Indexed keywords

COMPUTER AIDED DESIGN; GRAIN BOUNDARIES; MODEL STRUCTURES; RELIABILITY; STRESSES; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS;

3-D SIMULATIONS; DUAL-DAMASCENE STRUCTURES; ELECTROMIGRATION RELIABILITIES; ELECTROMIGRATION TESTING; INTERCONNECT; INTERCONNECT RELIABILITIES; LAYOUT DESIGN; MECHANICAL STRESS; MICROSTRUCTURAL CHARACTERISTICS; PHYSICAL MODELING; PHYSICAL MODELS; SIMULATION; TECHNOLOGY COMPUTER-AIDED DESIGNS; USAGE SCENARIOS;

ELECTROMIGRATION;

EID: 61849182478     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2008.2000893     Document Type: Article

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