Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1821-1826

  Dalleau, David ^a   Weide Zaage, Kirsten ^a   Danto, Yves ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELDS; HYDROSTATIC PRESSURE; METALLIZING; THERMAL DIFFUSION; THERMAL GRADIENTS; THERMAL STRESS; THERMOMECHANICAL TREATMENT;

VOID FORMATION;

MICROELECTRONICS;

EID: 0041692468     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00310-X     Document Type: Conference Paper

References (6)

1. Dalleau; D.; Weide-Zaage, K.: "3-D Time-Depending Electro- and Thermomigration Simulation of Metallization Structures", Proc. Adv. Met. ULSI App., Conf., San Diego, Oktober 2000.
2. Dalleau, D.; Weide-Zaage, K.: "Three-Dimensional Voids Simulation in Chip-level Metallization Structures: A contribution to reliability evaluation", Micr. Rel. 41 (2001) pp 1625-1630.
3. Dalleau, D.; Weide-Zaage, K.:" 3-D Time-depending Simulation of Voids formation in a SWEAT Metallization Structure." Proc. EuroSimE April 2002
4. Weide-Zaage; K, Dalleau, D; Yu, X.: "Static and Dynamic Analysis of Failure Locations and Void Formation in Interconnects Due to the Different Migration Mechanisms", accepted for publishing in Elsevier Materials Science in Semiconductor Processing 2002
5. TH IRPS 2000, pp. 324-332
6. Hu, c.-K.; Gignac, S.; Malhortra, G.; et al.: «Mechanism for very long electromigration lifetime in dual-damascene Cu interconnections», Appl. Phys, Lett., Vol. 78, No. 7, 2001 pp. 904-906.