A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Sukharev, Valeriy ^a   Zschech, Ehrenfried ^b   Nix, William D ^c  

^a Ponte Solutions Inc   (United States)

^b IBM MICROELECTRONICS   (United States)

^c Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; COPPER; DEGRADATION; ELASTICITY; ELECTROMIGRATION;

ATOM MIGRATION; COUPLED ELECTROMAGNETICS; ELASTICITY PROBLEMS;

OPTICAL INTERCONNECTS;

EID: 34548620299     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2775538     Document Type: Article

References (41)

1. V. Sukharev and E. Zschech, J. Appl. Phys. 96, 6337 (2004).
2. E. Zschech, Z. Metallkd. 96, 996 (2005).
3. P. S. Ho, K. D. Lee, E. T. Ogawa, S. Yoon, and X. Lu, in Characterization and Metrology for ULSI Technology, AIP Conf. Proc. 683, edited by, D. G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, S. Zollner, R. P. Khosia, and, E. M. Secula, (AIP, Melville, NY, 2003), pp. 533-539.
4. C. K. Hu, S. G. Malhotra, and L. Gignac, Proc. Electrochem. Soc. 31, 206 (1999).
5. E. T. Ogawa, K. D. Lee, V. A. Blaschke, and P. S. Ho, IEEE Trans. Reliab. 51, 403 (2002).
6. E. Zschech and V. Sukharev, Microelectron. Eng. 82, 629 (2005).
7. E. Zschech, M. A. Meyer, S. G. Mhaisalkar, A. V. Vairagar, A. Krishnamoorthy, H.-J. Engelmann, and V. Sukharev, Thin Solid Films 504, 279 (2006).
8. N. I. Peterson, J. Nucl. Mater. 69&70, 3 (1970).
9. Handbook of Grain and Interphase Boundary Diffusion Data, edited by, I. Kaur, and, W. Gust, (Ziegler, Stuttgart, 1989).
10. D. Gupta, C. K. Hu, and K. L. Lee, Defect Diffus. Forum 143, 1397 (1997).
11. E. Zschech, H. Geisler, I. Zienert, H. Prinz, E. Langer, M. A. Meyer, and G. Schneider, Proceedings of the Advanced Metallization Conference (AMC), edited by, B. M. Melnick, T. S. Cale, S. Zaima, and, T. Ohta, San Diego, CA, 2002 (unpublished), p. 305.
12. M. A. Meyer, M. Grafe, H.-J. Engelmann, E. Langer, and E. Zschech, AIP Conf. Proc. 817, 175 (2006).
13. V. Sukharev, AIP Conf. Proc. 817, 244 (2006).
14. O. V. Kononenko, V. N. Malveev, Y. I. Koval, S. V. Dubonos, and V. T. Volkov, Mater. Res. Soc. Symp. Proc. 427, 127 (1996).
15. R. Gonella, Microelectron. Eng. 55, 245 (2001).
16. E. Glickman and M. Nathan, J. Appl. Phys. 80, 3782 (1996).
17. C. K. Hu, R. Rosenberg, and K. L. Lee, Appl. Phys. Lett. 74, 2945 (1999).
18. D. Edelstein, C. Uzoh, C. Cabral, Jr., P. DeHaven, P. Buchwalter, A. Simon, E. Cooney, S. Malhotra, D. Klaus, H. Rathore, B. Agarwala, and D. Nguyen, Proceedings of the International Interconnect Technology Conference (IITC), Piscataway, NJ, 2001 (unpublished), p. 9.
19. E. Zschech, M. A. Meyer, and E. Langer, Mater. Res. Soc. Symp. Proc. 812, 361 (2004).
20. M. A. Meyer, M. Herrmann, E. Langer, and E. Zschech, Microelectron. Eng. 64, 375 (2002).
21. M. A. Meyer, M. Grafe, H. J. Engelmann, and E. Zschech, Materials for Advanced Metallization Conference (MAM), Brussels, 2004 (unpublished).
22. M. W. Lane, E. G. Liniger, and J. R. Lloyd, J. Appl. Phys. 93, 1417 (2003).
23. M. Lane and R. Rosenberg, Mater. Res. Soc. Symp. Proc. 766, 153 (2003).
24. M. Y. Yan, K. N. Tu, A. V. Vairgar, M. A. Meyer, H. Geisler, A. Preusse, and E. Zschech, AIP Conf. Proc. 817, 211 (2006).
25. T. Berger, L. Arnaud, R. Gonella, I. Touet, and G. Lormand, Mater. Res. Soc. Symp. Proc. 612, D2.4 (2000).
26. L. Vanasupa, Y.-C. Joo, P. R. Besser, and S. Pramanick, J. Appl. Phys. 85, 2583 (1999).
27. J. R. Lloyd, C. E. Murray, T. M. Shaw, M. W. Lane, X.-H. Liu, and E. G. Liniger, AIP Conf. Proc. 817, 23 (2006).
28. W. W. Mullins, Metall. Mater. Trans. A 26A, 1917 (1995).
29. R. J. Gleixner and W. D. Nix, J. Appl. Phys. 86, 1932 (1999).
30. S. Rzepka, M. A. Korhonen, E. R. Weber, and C.-Y. Li, Mater. Res. Soc. Symp. Proc. 473, 329 (1997).
31. C. Herring, J. Appl. Phys. 21, 437 (1950).
32. W. D. Nix and E. Arzt, Metall. Trans. A 23, 2007 (1992).
33. R. Kirchheim, Acta Metall. Mater. 40, 309 (1992).
34. D. N. Bhate, A. F. Bower, and A. Kumar, J. Mech. Phys. Solids 50, 2057 (2002).
35. J. J. Clement, IEEE Trans. Device Mater. Reliab. 1, 33 (2001).
36. M. E. Sarychev, Y. V. Zhitnikov, L. Borucki, C. L. Liu, and T. M. Makhviladze, J. Appl. Phys. 86, 3068 (1999).
37. V. Sukharev, IEEE Trans. Comput.-Aided Des. 24, 1326 (2005).
38. V. Timoshenko and J. N. Goodier, Theory of Elasticity (McGraw-Hill, New York, 1951).
39. COMSOL, Inc., 8 New England Executive Park, Burlington, MA 01803.
40. I. A. Blech, J. Appl. Phys. 47, 1203 (1976).
41. S. H. Kang, Y. S. Obeng, M. A. Decker, M. Oh, S. M. Merchant, S. K. Karthikeyan, C. S. Seet, and A. S. Oates, J. Electron. Mater. 30, 1506 (2001).