Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4 F 8 - And CF4 -based discharges

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1165-1179

  Engelmann, S ^a,e   Bruce, R L ^a   Weilnboeck, F ^a   Sumiya, M ^a   Kwon, T ^a   Phaneuf, R ^a   Oehrlein, G S ^a   Andes, C ^b   Graves, D ^c   Nest, D ^c   Hudson, E A ^d  

^a University of Maryland   (United States)

^b ROHM AND HAAS COMPANY   (United States)

^c University of California   (United States)

^d LAM RESEARCH CORPORATION   (United States)

^e IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FLUORINATION; FLUORINE; FOURIER ANALYSIS; GASES; HALOGENATION; METADATA; METAL ANALYSIS; PHOTOREFRACTIVE MATERIALS; PHOTORESISTS; PLASMA DEPOSITION; PLASMA ETCHING; PLASMAS; POLYMERS; SURFACE DISCHARGES; SURFACE PROPERTIES; SURFACE TREATMENT;

BULK POLYMER; ENERGY DENSITY; ETCH RATES; ETCH YIELD; FAST FOURIER TRANSFORMATIONS; FLUORINATED SURFACE; FLUORINE ATOMS; FLUOROCARBON FILMS; GASPHASE; GRAPHITIC LAYERS; LAYER DEPOSITION; LINE EDGE ROUGHNESS; LOW ENERGIES; ORGANIC MATERIALS; PERFORMANCE LIMITING FACTOR; PHOTORESIST MATERIALS; PHOTORESIST SURFACES; PLASMA ETCHING RESISTANCE; PLASMA-BASED PATTERN TRANSFER; POLYMER ETCHING; POLYMER LAYERS; POLYMER SURFACES; PRECURSOR DEPOSITION; PROCESS CONDITION; PROFILE EVOLUTION; ROUGHNESS EVOLUTION; SMALL SCALE; SPATIAL FREQUENCY; SURFACE CHEMICALS; SURFACE LAYERS; SURFACE-ROUGHENING; THREE-DIMENSIONAL STRUCTURE; TRANSFER MECHANISMS;

SURFACE ROUGHNESS;

EID: 70450213185     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3137012     Document Type: Conference Paper

References (62)

1. X. Hua, S. Engelmann, G. S. Oehrlein, P. Jiang, P. Lazzeri, E. Iacob, and M. Anderle, J. Vac. Sci. Technol. B 24, 1850 (2006). 10.1116/1.2217973 (Pubitemid 44140795)
2. Y. C. Bae, Proc. SPIE 5039, 665 (2003). 10.1117/12.483761
3. M. J. May, B. Mortini, C. Sourd, D. Perret, D. W. Chung, G. Barclay, C. Brochon, and G. Hadziioannou, Proc. SPIE 6153, 61530P (2006). 10.1117/12.656397 (Pubitemid 43991154)
4. E. A. Hudson, Z. Dai, Z. Li, S. Kang, S. Lee, W. Chen, and R. Sadjadi, Proceedings of the International Symposium on Dry Processes, 2003 (unpublished), p. 253.
5. N. Negishi, H. Takesue, M. Sumiya, T. Yoshida, Y. Momonoi, and M. Izawa, J. Vac. Sci. Technol. B 23, 217 (2005). 10.1116/1.1849218 (Pubitemid 43126557)
6. S. Engelmann, J. Vac. Sci. Technol. B 25, 1353 (2007). 10.1116/1.2759935 (Pubitemid 47192124)
7. S. Engelmann, J. Vac. Sci. Technol. B 27, 92 (2009). 10.1116/1.3054342
8. J. H. Min, G. R. Lee, J. K. Lee, and S. H. Moon, J. Vac. Sci. Technol. B 22, 2580 (2004). 10.1116/1.1808746 (Pubitemid 40184992)
9. V. Krastev, I. Reid, C. Galassi, G. Hughes, and E. McGlynn, J. Mater. Sci.: Mater. Electron. 16, 541 (2005). 10.1007/s10854-005-2730-5 (Pubitemid 41320096)
10. M. Schaepkens, I. Martini, E. A. Sanjuan, X. Li, G. S. Oehrlein, W. L. Perry, and H. M. Anderon, J. Vac. Sci. Technol. A 19, 2946 (2001). 10.1116/1.1415361 (Pubitemid 33113713)
11. H. H. Doh, J. H. Kim, S. H. Lee, and K. W. Whang, J. Vac. Sci. Technol. A 14, 2827 (1996). 10.1116/1.580231
12. L. M. Ephrath, J. Electrochem. Soc. 126, 1419 (1979). 10.1149/1.2129291
13. Y. Zhang, G. S. Oehrlein, and F. H. Bell, J. Vac. Sci. Technol. A 14, 2127 (1996). 10.1116/1.580091
14. G. S. Oehrlein and H. L. Williams, J. Appl. Phys. 62, 662 (1987). 10.1063/1.339766
15. N. Takada, T. Iida, K. Shibagaki, and K. Sasaki, J. Vac. Sci. Technol. A 22, 413 (2004). 10.1116/1.1647596
16. G. S. Oehrlein, Y. Zhang, D. Vender, and M. Haverlag, J. Vac. Sci. Technol. A 12, 323 (1994). 10.1116/1.578876 (Pubitemid 24774239)
17. C. Hohle, J. Microlithogr., Microfabr., Microsyst. 4, 043009 (2005). 10.1117/1.2131101 (Pubitemid 44266118)
18. K. Yonekura, K. Yoshikawa, Y. Fujiwara, S. Sakamori, N. Fujiwara, T. Kosaka, M. Ohkuni, and K. Tateiwa, Thin Solid Films 515, 5012 (2007). 10.1016/j.tsf.2006.10.037 (Pubitemid 46399861)
19. T. H. Fedynshyn, R. R. Kunz, R. F. Sinta, R. B. Goodman, and S. P. Doran, J. Vac. Sci. Technol. B 18, 3332 (2000). 10.1116/1.1318186 (Pubitemid 32088211)
20. A. A. Miller, E. J. Lawton, and J. S. Balwit, J. Polym. Sci. 14, 503 (1954). 10.1002/pol.1954.120147711
21. X. Hua, X. Wang, D. Fuentevilla, G. S. Oehrlein, F. G. Celii, and K. H. R. Kirmse, J. Vac. Sci. Technol. A 21, 1708 (2003). 10.1116/1.1598973
22. S. Nakamura, M. Itano, H. Aoyama, K. Shibahara, S. Yokoyama, and M. Hirose, Jpn. J. Appl. Phys., Part 1 42, 5759 (2003). 10.1143/JJAP.42.5759
23. W. T. Tsai, H. P. Chen, and W. Y. Hsien, J. Loss Prev. Process Ind. 15, 65 (2002). 10.1016/S0950-4230(01)00067-5 (Pubitemid 34147654)
24. N. Takada, H. Toyoda, I. Murakami, and H. Sugai, J. Appl. Phys. 97, 013534 (2005). 10.1063/1.1829400 (Pubitemid 40183126)
25. M. J. May, B. Mortini, M. Heitzmann, P. Gautier, C. Sourd, C. Brochon, and G. Hadziioannou, Microelectron. Eng. 83, 1098 (2006). 10.1016/j.mee.2006.01. 169
26. X. Li, X. Hua, L. Ling, G. S. Oehrlein, M. Barela, and H. M. Anderson, J. Vac. Sci. Technol. A 20, 2052 (2002). 10.1116/1.1517256
27. H. H. Doh, J. H. Kim, K. W. Whang, and S. H. Lee, J. Vac. Sci. Technol. A 14, 1088 (1996). 10.1116/1.580138 (Pubitemid 126082219)
28. C. J. Choi, O. S. Kwon, Y. S. Seol, Y. W. Kim, and I. H. Choi, J. Vac. Sci. Technol. B 18, 811 (2000). 10.1116/1.591281
29. G. S. Oehrlein, Y. Zhang, D. Vender, and O. Joubert, J. Vac. Sci. Technol. A 12, 333 (1994). 10.1116/1.578877 (Pubitemid 24774240)
30. M. Sumiya, R. Bruce, S. Engelmann, F. Weilnboeck, and G. S. Oehrlein, J. Vac. Sci. Technol. B 26, 1637 (2008). 10.1116/1.2960561
31. M. Izawa, N. Negishi, K. Yokogawa, and Y. Momonoi, Jpn. J. Appl. Phys., Part 1 46, 7870 (2007). 10.1143/JJAP.46.7870
32. B. Ji, S. A. Motika, P. R. Badowski, S. Dheandhanoo, J. R. Stets, and E. J. Karwacki, Solid State Technol. 48, 45 (2005).
33. X. Li, L. Ling, X. Hua, G. S. Oehrlein, Y. Wang, A. V. Vasenkov, and M. J. Kushner, J. Vac. Sci. Technol. A 22, 500 (2004). 10.1116/1.1697482
34. X. Hua, J. Vac. Sci. Technol. A 23, 151 (2005). 10.1116/1.1821584 (Pubitemid 43126421)
35. S. Engelmann and G. S. Oehrlein (unpublished).
36. S. Briggs, Surface Analysis of Polymers by XPS and Static SIMS (Cambridge University Press, Cambridge, 1998).
37. M. Schaepkens, T. E. F. M. Standaert, N. R. Rueger, P. G. M. Sebel, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. A 17, 26 (1999). 10.1116/1.582108
38. X. Li, L. Ling, X. Hua, G. S. Oehrlein, Y. Wang, and H. M. Anderson, J. Vac. Sci. Technol. A 21, 1955 (2003). 10.1116/1.1619420
39. X. Li, L. Ling, X. Hua, M. Fukasawa, G. S. Oehrlein, M. Barela, and H. M. Anderson, J. Vac. Sci. Technol. A 21, 284 (2003). 10.1116/1.1531140
40. F. H. Bell, O. Joubert, G. S. Oehrlein, Y. Zhang, and D. Vender, J. Vac. Sci. Technol. A 12, 3095 (1994). 10.1116/1.578942 (Pubitemid 24836847)
41. H. Gokan, S. Esho, and Y. Onishi, J. Electrochem. Soc. 130, 143 (1983). 10.1149/1.2119642
42. R. R. Kunz, S. C. Palmateer, A. R. Forte, R. D. Allen, G. M. Wallraff, R. A. DiPietro, and D. C. Hofer, Proc. SPIE 2724, 365 (1996). 10.1117/12.241835
43. S. Kishimura, M. Endo, and M. Sasogo, Proc. SPIE 4690, 200 (2002). 10.1117/12.474219 (Pubitemid 35250844)
44. K. S. Patel, V. Pham, W. Li, M. Khojasteh, and P. R. Varasani, Proc. SPIE 6153, 51530Q (2006).
45. T. I. Wallow, Proc. SPIE 3678, 26 (1999). 10.1117/12.350211
46. T. Yu, P. Ching, C. K. Ober, S. V. Deshpande, and R. Puligadda, Proc. SPIE 4345, 945 (2001). 10.1117/12.436819 (Pubitemid 32993667)
47. D. Perret, C. E. Andes, K. S. Cheon, M. Sobhian, C. R. Szmanda, G. G. Barclay, and P. Trefonas III, Proc. SPIE 6519, 651912 (2007). 10.1117/12.712242 (Pubitemid 47551057)
48. C. W. Jurgensen, A. Shugard, N. Dudash, E. Reichmanis, and M. J. Vasile, J. Vac. Sci. Technol. A 6, 2938 (1988). 10.1116/1.575455
49. J. Ding, J. S. Jenq, G. H. Kim, H. L. Maynard, J. S. Hamers, N. Hershkowitz, and J. W. Taylor, J. Vac. Sci. Technol. A 11, 1283 (1993). 10.1116/1.578540
50. T. E. F. M. Standaert, J. Vac. Sci. Technol. A 19, 435 (2001). 10.1116/1.1349201 (Pubitemid 32394416)
51. O. Joubert, J. Pelletier, and Y. Arnal, J. Appl. Phys. 65, 5096 (1989). 10.1063/1.343186
52. C. W. Jurgensen and A. Rammelsberg, J. Vac. Sci. Technol. A 7, 3317 (1989). 10.1116/1.576143
53. T. M. Mayer and R. A. Barker, J. Vac. Sci. Technol. 21, 757 (1982). 10.1116/1.571821 (Pubitemid 13459004)
54. T. M. Mayer and R. A. Barker, J. Electrochem. Soc. 129, 585 (1982). 10.1149/1.2123929
55. T. M. Mayer, R. A. Barker, and L. J. Whitman, J. Vac. Sci. Technol. 18, 349 (1981). 10.1116/1.570780
56. J. J. Vegh, Appl. Phys. Lett. 91, 233113 (2007). 10.1063/1.2821226 (Pubitemid 350234493)
57. J. J. Vegh, J. Appl. Phys. 104, 034308 (2008). 10.1063/1.2963708
58. B. J. Orf, S. G. Walton, D. Leonhardt, and G. S. Oehrlein, J. Vac. Sci. Technol. B 25, 779 (2007). 10.1116/1.2732741 (Pubitemid 46872365)
59. M. Sumiya, R. Bruce, S. Engelmann, F. Weilnboeck, and G. S. Oehrlein, J. Vac. Sci. Technol. B 26, 1647 (2008). 10.1116/1.2960563
60. J. M. Elson and J. M. Bennett, Appl. Opt. 34, 201 (1995). 10.1364/AO.34.000201
61. T. Wallow, Proc. SPIE 6519, 651919 (2007). 10.1117/12.712319 (Pubitemid 47551063)
62. D. Nest, D. B. Graves, S. Engelmann, R. L. Bruce, F. Weilnboeck, G. S. Oehrlein, C. Andes, and E. A. Hudson, Appl. Phys. Lett. 92, 153113 (2008). 10.1063/1.2912028 (Pubitemid 351555751)