Evidence of direct Si O2 etching by fluorocarbon molecules under ion bombardment

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Takada, N ^a   Toyoda, H ^a   Murakami, I ^a   Sugai, H ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING REACTORS; FLUX RATIOS; INCIDENT ENERGY; RADICAL FLUX;

COMPOSITION; DRY ETCHING; ION BOMBARDMENT; IONIZATION; IONS; SAMPLING; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICA;

EID: 19944432641     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829400     Document Type: Article

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