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Volumn 48, Issue 11, 2005, Pages

Fluorine plasma chemistry for high-AR dielectric etching

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC ETCHING; ETCH MOLECULES; PLASMA CHEMISTRY;

EID: 29144475558     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review
Times cited : (11)

References (12)
  • 1
    • 13244267447 scopus 로고    scopus 로고
    • Investigations of surface modifications of 193 and 248 nm photoresist materials during low-pressure plasma etching
    • L. Ling, X. Hua, X. Li, G.S. Oehrlein, E.A. Hudson, P. Lazzeri, et al., "Investigations of Surface Modifications of 193 and 248 nm Photoresist Materials During Low-pressure Plasma Etching," J. Vac. Sci. Technol. B 22, p. 2594, 2004.
    • (2004) J. Vac. Sci. Technol. B , vol.22 , pp. 2594
    • Ling, L.1    Hua, X.2    Li, X.3    Oehrlein, G.S.4    Hudson, E.A.5    Lazzeri, P.6
  • 3
    • 0018500871 scopus 로고
    • 4 in a tubular-alumina fast-flow reactor
    • 4 in a Tubular-alumina Fast-flow Reactor," J. Appl. Phys. 50, p. 4982, 1979.
    • (1979) J. Appl. Phys. , vol.50 , pp. 4982
    • Smolinsky, G.1    Flamm, D.L.2
  • 5
    • 0018505687 scopus 로고
    • 2 glow discharges
    • 2 Glow Discharges," J. Appl. Phys. 50, p. 5210, 1979.
    • (1979) J. Appl. Phys. , vol.50 , pp. 5210
    • Coburn, J.W.1
  • 6
    • 0018469799 scopus 로고
    • Ion- And electron-assisted gas-surface chemistry: An important effect in plasma etching
    • J.W. Coburn, H.F. Winters, "Ion- and Electron-assisted Gas-surface Chemistry: An Important Effect in Plasma Etching," J. Appl. Phys. 50, p. 3189, 1979.
    • (1979) J. Appl. Phys. , vol.50 , pp. 3189
    • Coburn, J.W.1    Winters, H.F.2
  • 7
    • 84888923268 scopus 로고    scopus 로고
    • The evaluation of hexafluoro-1,3-butadiene as an environmentally benign dielectric etch chemistry in a medium-density etch chamber
    • R. Chatterjee, R. Reif, T. Sparks, V. Vartanian, B. Goolsby, L. Mendicino, "The Evaluation of Hexafluoro-1,3-butadiene as an Environmentally Benign Dielectric Etch Chemistry in a Medium-density Etch Chamber," Electrochem. Soc. Proc. 15, p. 99, 2002.
    • (2002) Electrochem. Soc. Proc. , vol.15 , pp. 99
    • Chatterjee, R.1    Reif, R.2    Sparks, T.3    Vartanian, V.4    Goolsby, B.5    Mendicino, L.6
  • 11
    • 36449003502 scopus 로고    scopus 로고
    • Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas
    • M.F. Doemling, N.R. Rueger, G.S. Oehrlein, "Observation of Inverse Reactive Ion Etching Lag for Silicon Dioxide Etching in Inductively Coupled Plasmas," Appl. Phys. Lett. 68, p. 10, 1996.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 10
    • Doemling, M.F.1    Rueger, N.R.2    Oehrlein, G.S.3
  • 12
    • 36449001969 scopus 로고
    • The gaseous electronics conference - Radio-frequency reference cell: A denned parallel-plate radio-frequency system for experimental and theoretical studies of plasma-processing discharges
    • P.J.HargisJr.,K.E.Greenberg,P.A.Miller,J.B.Gerardo,J.R.Torczynski,M.E. Riley, et al., "The Gaseous Electronics Conference - Radio-frequency Reference Cell: A Denned Parallel-plate Radio-frequency System for Experimental and Theoretical Studies of Plasma-processing Discharges," Rev. Sci. Instrument. 65, p. 140, 1994.
    • (1994) Rev. Sci. Instrument. , vol.65 , pp. 140
    • Hargis Jr., P.J.1    Greenberg, K.E.2    Miller, P.A.3    Gerardo, J.B.4    Torczynski, J.R.5    Riley, M.E.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.