Investigating 248 and 193 nm resist degradation during reactive ion oxide etching

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1098-1102

  May, Michael J ^a,c   Mortini, Bénédicte ^a   Heitzmann, Michel ^b   Gautier, Pauline ^b   Sourd, Claire ^b   Brochon, Cyril ^c   Hadziioannou, Georges ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

193 and 248 nm positive tone resists; Chemical amplification; DSC; Etch resistance; FTIR; Oxide etch; TGA

Indexed keywords

DIFFERENTIAL SCANNING CALORIMETRY; ELECTRIC RESISTANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ETCHING; POLYMERS; THERMOGRAVIMETRIC ANALYSIS;

193 AND 248 NM POSITIVE TONE RESISTS; CHEMICAL AMPLIFICATION; ETCH RESISTANCE; OXIDE ETCH;

REACTIVE ION ETCHING;

EID: 33646036402     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.169     Document Type: Article

References (4)

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