Development of an incremental structural parameter model for predicting reactive ion etch rates of 193 nm photoresist polymers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3678, Issue I, 1999, Pages 26-35

  Wallow, T ^a   Brock, P ^a   Di Pietro, R ^a   Allen, R ^a   Opitz, J ^a   Sooriyakumaran, R ^a   Hofer, D ^a   Mewherter, A M ^a   Cui, Y ^a   Yan, W ^a   Worth, G ^a   Moreau, W ^a   Meute, J ^a   Byers, J ^a   Rich, G K ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OLEFINS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MODELS; STYRENE;

INCREMENTAL STRUCTURAL PARAMETER (ISP);

PHOTORESISTS;

EID: 0032662159     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)