Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 5012-5018

  Yonekura, Kazumasa ^a   Yoshikawa, Kazunori ^a   Fujiwara, Yuji ^a   Sakamori, Shigenori ^a   Fujiwara, Nobuo ^a   Kosaka, Takayoshi ^b   Ohkuni, Mitsuhiro ^b   Tateiwa, Kenji ^b  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Etching; Hydrogen; Plasma processing and deposition; X ray photoelectron spectroscopy (XPS)

Indexed keywords

CHEMICAL MODIFICATION; ETCHING; FLUOROCARBONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; X RAY PHOTOELECTRON SPECTROSCOPY;

DUAL-DAMASCENE PATTERNING; FLUOROCARBON PLASMA; HOLE ETCHING; PHOTORESIST MODIFICATION;

PHOTORESISTS;

EID: 33947174133     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.037     Document Type: Article

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