Characteristics of C4F8 plasmas with Ar, Ne, and He additives for SiO2 etching in an inductively coupled plasma (ICP) reactor

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 6, 2003, Pages 1955-1963

  Li, Xi ^a   Hua, Xuefeng ^a   Oehrlein, Gottlieb S ^a   Wang, Yicheng ^b   Anderson, H M ^c  

^a The Institute for Research in Electronics and Applied Physics   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ARGON; COMPOSITION; CURRENT DENSITY; ELECTRIC DISCHARGES; ETCHING; FLUOROCARBONS; HELIUM; IONIZATION; NEON; PLASMA DEVICES; SILICA;

CHEMICAL BOND DISTRIBUTION; ELECTRON IMPACT IONIZATION THRESHOLDS; FLUOROCARBON FILMS; INDUCTIVELY COUPLED PLASMA REACTOR; ION COMPOSITIONAL ANALYSIS; IONIZATION POTENTIALS;

INDUCTIVELY COUPLED PLASMA;

EID: 0842333283     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1619420     Document Type: Article

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