Comparative studies of perfluorocarbon alternative gas plasmas for contact hole etch

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5759-5764

  Nakamura, Shingo ^a   Itano, Mitsushi ^a   Aoyama, Hirokazu ^a   Shibahara, Kentaro ^b   Yokoyama, Shin ^a   Hirose, Masataka ^c  

^a DAIKIN INDUSTRIES LTD   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Contact hole etch; Greenhouse effect; Inductively coupled plasma (ICP); PFC alternative gas; SiO2 etching; Straight chain unsaturated fluorocarbon

Indexed keywords

ATOMIC FORCE MICROSCOPY; DECOMPOSITION; ELECTRIC CONTACTS; ETCHING; FLUOROCARBONS; GREENHOUSE EFFECT; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; MIXING; PLASMA DEVICES; PLASMA DIAGNOSTICS; SEMICONDUCTOR DEVICE MANUFACTURE;

ALTERNATIVE GAS PLASMAS; CONTACT HOLE ETCH; LANGMUIR PROBE; PERFLUOROCARBON;

PLASMAS;

EID: 0345356926     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5759     Document Type: Article

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