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Volumn 16, Issue 8, 2005, Pages 541-547

Influence of C4F8/Ar/O2 plasma etching on SiO2 surface chemistry

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL REACTORS; COMPOSITION EFFECTS; ETCHING; FLUORINE COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OXYGEN; PLASMA ETCHING; SECONDARY ION MASS SPECTROMETRY; SURFACE CHEMISTRY; SURFACE REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 24944447722     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10854-005-2730-5     Document Type: Article
Times cited : (12)

References (20)
  • 14
  • 16
    • 0012302182 scopus 로고
    • Secondary Ion Mass Spectrometry
    • edited by R. G. Wilson, F. A. Stevie, C. W. Magee. (A Wiley-Interscience Publication)
    • Secondary Ion Mass Spectrometry. "A Practical Handbook For Depth Profiling and Bulk Impurity Analysis." edited by R. G. Wilson, F. A. Stevie, C. W. Magee. (A Wiley-Interscience Publication. 1989).
    • (1989) "A Practical Handbook For Depth Profiling and Bulk Impurity Analysis"


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.