Surface kinetics modeling of silicon and silicon oxide plasma etching. I. Effect of neutral and ion fluxes on etching yield of silicon oxide in fluorocarbon plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 5, 2006, Pages 1906-1913

  Kwon, Ohseung ^a   Sawin, Herbert H ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUOROCARBON PLASMAS; ION CURRENT; ION FLUXES; QUARTZ CRYSTAL;

CONCENTRATION (PROCESS); IONS; MASS SPECTROMETRY; PLASMAS; SILICA; SILICON; SURFACE REACTIONS;

PLASMA ETCHING;

EID: 33748521607     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2336225     Document Type: Article

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