Cl2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy

Journal of Applied Physics

Volumn 81, Issue 10, 1997, Pages 6738-6748

  Layadi, N ^a,b   Donnelly, V M ^a   Lee, J T C ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001498665     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365216     Document Type: Article

References (31)

1. D. L. Flamm and V. M. Donnelly, Plasma Chem. Plasma Process. 1, 317 (1981).
2. D. L. Flamm, V. M. Donnelly, and D. E. Ibbotson, in VLSI Electronics Microstructure Science, edited by N. G. Einspruch and D. M. Brown (Academic, New York, 1984), pp. 189-251.
3. D. M. Manos and D. L. Flamm, Plasma Etching, An Introduction (Academic, Boston, 1989).
4. C. C. Cheng, K. V. Guinn, V. M. Donnelly, and I. P. Herman, J. Vac. Sci. Technol. A 12, 2630 (1994).
5. P. I. Herman, V. M. Donnelly, K. V. Guinn, and C. C. Cheng, Phys. Rev. Lett. 72, 2801 (1994).
6. T. D. Durbin, W. C. Simpson, V. Chakarian, D. K. Shuh, P. R. Varekamp, C. W. Lo, and J. A. Yarmoff, Surf. Sci. 316, 257 (1994).
7. C. C. Cheng, Q. Gao, W. J. Choyke, and J. T. Yates, Jr., Phys. Rev. B 46, 12810 (1992); Q. Gao, C. C. Cheng, P. J. Chen, W. J. Choyke, and J. T. Yates, Jr., J. Chem. Phys. 98, 8308 (1993).
8. C. C. Cheng, Q. Gao, W. J. Choyke, and J. T. Yates, Jr., Phys. Rev. B 46, 12810 (1992); Q. Gao, C. C. Cheng, P. J. Chen, W. J. Choyke, and J. T. Yates, Jr., J. Chem. Phys. 98, 8308 (1993).
9. V. M. Donnelly, J. Vac. Sci. Technol, A 14, 1076 (1996).
10. M. E. Barone and D. B. Graves, J. Appl. Phys. 78, 6604 (1995).
11. K. V. Guinn, C. C. Cheng, and V. M. Donnelly, J. Vac. Sci. Technol. B 13, 214 (1995).
12. N. Layadi, V. M. Donnelly, J. T. C. Lee, and F. P. Klemens, J. Vac. Sci. Technol. A. (in press, 1997).
13. M. P. Seah and W. A. Dench, Surf. Interface Anal. 1, 2 (1979).
14. Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, edited by D. Briggs and M. P. Seah, (Wiley, New York, 1983).
15. L. J. Whitman, S. A. Joyce, J. A. Yarmoff, F. R. McFeely, and L. J. Tereminello, Surf. Sci. 232, 297 (1990).
16. J. S. Pan, A. T. S. Wee, C. H. A. Huan, H. S. Tan, and K. L. Tan, J. Appl. Phys. 79, 2934 (1996).
17. TRIM calculation, D. Jacobson (private communication).
18. G. Gergely, M. Menyhard, K. Pentek, A. Sulyok, A. Jablonski, B. Lesiak, and Cs. Daroczi, Surf. Sci. 331-333, 1203 (1995).
19. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 17, 911 (1991).
20. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 17, 927 (1991).
21. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 20, 77 (1993).
22. C. J. Powell, A. Jablonski, S. Tanuma, and D. R. Penn, J. Electron Spectrosc. Relat. Phenom. 68, 605 (1994).
23. F. Yubero, S. Tougaard, E. Elizalde, and J. M. Sanz, Surf. Interface Anal. 20, 719 (1993).
24. G. C. Smith and A. K. Livesey, Surf. Interface Anal. 19, 175 (1992).
25. K. Nishikawa, K. Ono, M. Tuda, T. Oomori, and K. Namba, Proceedings of the Dry Process Symposium, Tokyo, 1994 (unpublished), pp. 105-109.
26. K. Ono, Eighth Symposium on Plasma Science for Materials (Japan Society for the Promotion of Science, Committee 153, 1994), pp. 99-108.
27. H. Feil, J. Dieleman, and B. J. Garrison, J. Appl. Phys. 74, 1303 (1993).
28. D. J. D. Sullivan, H. C. Flaum, and A. C. Kummel, J. Phys. Chem. 07, 12 051 (1993).
29. H. C. Flaum, D. J. D. Sullivan, and A. C. Kummel, J. Phys. Chem. 98, 1719 (1994).
30. M. E. Barone, 43rd American Vacuum Society Symposium, Philadelphia, PA, 1996 (unpublished).
31. G. S. Oehrlein, J. Vac. Sci. Technol. A 11, 34 (1993).