Atomistic simulations of spontàneous etching of silicon by fluorine and chlorine

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 791-798

  Humbird, David ^a   Graves, David B ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; ETCH PRODUCT DISTRIBUTION; MOLECULAR DYNAMICS (MD) SIMULATIONS; NEWTON'S EQUATIONS;

ADSORPTION; CHLORINE; COMPUTER SIMULATION; DISSOCIATION; EQUATIONS OF MOTION; FLUORINE; FLUOROCARBONS; KINETIC ENERGY; MATHEMATICAL MODELS; PLASMA ETCHING; PLASMAS; PROBABILITY; SILICON; THIN FILMS;

MOLECULAR DYNAMICS;

EID: 3142782445     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1753657     Document Type: Article

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