Surface molecular dynamics of Si/SiO2 reactive ion etching

Vacuum

Volumn 66, Issue 3-4, 2002, Pages 189-195

  Hamaguchi, S ^a   Ohta, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; MOLECULAR DYNAMICS; PLASMA ETCHING; POTENTIAL ENERGY; QUANTUM THEORY; SEMICONDUCTING SILICON; SILICA; SURFACE REACTIONS;

SURFACE MOLECULAR DYNAMICS;

REACTIVE ION ETCHING;

EID: 0037136157     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00128-8     Document Type: Article

References (14)